发明名称 Reduction in on-resistance in pass device
摘要 A pass device configured from a common gate transistor, wherein an input voltage is applied to the source and an output at the drain is applied to a load. The input resistance of the pass device increases as the input voltage is reduced and limits the useful range of the input voltage. Increasing the gate to source voltage (Vgs) by applying a negative voltage to the gate reduces the input resistance and increases the range of operation of the pass device.
申请公布号 US8981840(B1) 申请公布日期 2015.03.17
申请号 US201314028735 申请日期 2013.09.17
申请人 Dialog Semiconductor GmbH 发明人 Tyrrell Julian;Bhattad Ambreesh
分类号 G05F1/10;G05F3/02;G05F3/16 主分类号 G05F1/10
代理机构 Saile Ackerman LLC 代理人 Saile Ackerman LLC ;Ackerman Stephen B.
主权项 1. A pass device, comprising: a) a P-channel transistor; b) a source of the P-channel transistor capable of receiving an input supply voltage; c) a drain of the P-channel transistor capable of providing an output voltage to a load; and d) an increase in gate-to-source voltage (Vgs) capable of reducing input resistance of the P-channel transistor; e) wherein a negative one times multiplier (−1×) circuit provides the gate of the P-channel transistor with a bias capable of increasing (Vgs) and capable of being switched between Vss (0V) and the negative voltage created by the −1× circuit.
地址 Kirchheim/Teck-Nabern DE