| 发明名称 | Optical shield in a pixel cell planarization layer for black level correction | ||
| 摘要 | A pixel array includes a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array. A color filter layer is disposed proximate to the semiconductor layer. Light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer. An optical shield layer is disposed proximate to the color filter layer. The color filter layer is disposed between the optical shield layer and the semiconductor layer. The optical shield layer shields at least a second one of the plurality of photodiodes from the light. | ||
| 申请公布号 | US8981512(B1) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201314030395 | 申请日期 | 2013.09.18 |
| 申请人 | OmniVision Technologies, Inc. | 发明人 | Chen Gang;Li Jin;Mao Duli;Tai Dyson H. |
| 分类号 | H01L31/0232;H01L21/00;H01L31/18 | 主分类号 | H01L31/0232 |
| 代理机构 | Blakely Sokoloff Taylor & Zafman LLP | 代理人 | Blakely Sokoloff Taylor & Zafman LLP |
| 主权项 | 1. A pixel array comprising: a plurality of photodiodes disposed in a semiconductor layer and arranged in the pixel array; a color filter layer disposed proximate to the semiconductor layer, wherein light is to be directed to at least a first one of the plurality of photodiodes through the color filter layer, wherein the light is to be directed to said at least the first one of the plurality of photodiodes through a backside of the pixel array; an optical shield layer disposed proximate to the color filter layer, wherein the color filter layer is disposed between the optical shield layer and the semiconductor layer, wherein the optical shield layer shields at least a second one of the plurality of photodiodes from the light; and a planarization layer disposed over the color filter layer such that at least a portion of the planarization layer is disposed between the optical shield layer and the color filter layer. | ||
| 地址 | Santa Clara CA US | ||