Method for chemical mechanical polishing silicon wafers

摘要

A method for polishing a silicon wafer is provided, comprising: providing a silicon wafer; providing a polishing pad having a polishing layer which is the reaction product of raw material ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.4 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 μm/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the silicon wafer; and, creating dynamic contact between the polishing surface and the silicon wafer.

主权项

1. A method for polishing a silicon wafer, comprising:
providing a silicon wafer, having a surface; providing a chemical mechanical polishing pad, wherein the chemical mechanical polishing pad comprises a polishing layer which is the reaction product of raw material ingredients, comprising:
a polyfunctional isocyanate; and,a curative package, comprising:
at least 5 wt % of an amine initiated polyol curative, wherein the amine initiated polyol curative contains at least one nitrogen atom per molecule; wherein the amine initiated polyol curative has an average of at least three hydroxyl groups per molecule;25 to 95 wt % of a high molecular weight polyol curative, wherein the high molecular weight polyol curative has a number average molecular weight, MN, of 2,500 to 100,000; and wherein the high molecular weight polyol curative has an average of 3 to 10 hydroxyl groups per molecule; and,0 to 70 wt % of a difunctional curative;wherein the polishing layer exhibits a density of greater than 0.4 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 μm/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the silicon wafer; and, creating dynamic contact between the polishing surface of the polishing layer and the surface of the silicon wafer, wherein the surface of the silicon wafer is polished.