| 发明名称 | Method for manufacturing silicon carbide schottky barrier diode | ||
| 摘要 | The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n− epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n− epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n− epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n− epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode. | ||
| 申请公布号 | US8980732(B2) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201213372931 | 申请日期 | 2012.02.14 |
| 申请人 | Hyundai Motor Company | 发明人 | Hong Kyoung Kook;Lee Jong Seok |
| 分类号 | H01L21/02;H01L27/082;H01L29/872;H01L29/66;H01L21/04;H01L29/16 | 主分类号 | H01L21/02 |
| 代理机构 | Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. | 代理人 | Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. ;Corless Peter F. |
| 主权项 | 1. A method for manufacturing a silicon carbide Schottky barrier diode, comprising: depositing an n− epitaxial layer on an n+ substrate; protecting a first portion of the n− epitaxial layer with a sacrificial oxide film layer; etching a second portion of the n− epitaxial layer that is not protected by the sacrificial oxide film; implanting nitrogen into the second portion of the n− epitaxial layer and the sacrificial oxide film; depositing silicon nitride on the nitrogen implanted n− epitaxial layer and the sacrificial oxide film; heat-oxidizing the silicon nitride to form a composite oxide film; removing the sacrificial oxide film after etching a first portion of the composite oxide film formed on the sacrificial oxide film; depositing a Schottky metal so as to be disposed to cover the first portion of the n− epitaxial layer and at least a portion of a second portion of the composite oxide film formed on the second portion of the n− epitaxial layer; and depositing a metal pad on top of the Schottky metal; wherein the depositing of the Schottky metal is performed after etching the sacrificial oxide film and the first portion of the composite oxide film on which the Schottky metal is to be deposited. | ||
| 地址 | Seoul KR | ||