Methods of forming a semiconductor device

摘要

Methods of forming a semiconductor device are provided. The methods may include forming first and second layers that are alternately and repeatedly stacked on a substrate, and forming an opening penetrating the first and second layers. The methods may also include forming a first semiconductor pattern in the opening. The methods may additionally include forming an insulation pattern on the first semiconductor pattern. The methods may further include forming a second semiconductor pattern on the insulation pattern. The methods may also include providing dopants in the first semiconductor pattern. Moreover, the methods may include thermally treating a portion of the first semiconductor pattern to form a third semiconductor pattern.

主权项

1. A method of forming a semiconductor device comprising:
forming sacrificial layers and insulating layers that are alternately and repeatedly stacked on a substrate; forming a channel opening penetrating the sacrificial layers and the insulating layers, the channel opening exposing a top surface of the substrate; forming a first semiconductor pattern conformally covering an inner sidewall of the channel opening; forming an insulation pattern on the first semiconductor pattern and in the channel opening; forming a second semiconductor pattern on the insulation pattern to substantially fill the channel opening; injecting dopants into the first semiconductor pattern; and melting a portion of the first semiconductor pattern adjacent an uppermost one of the sacrificial layers to form a third semiconductor pattern.