| 发明名称 | Resist pattern improving material, method for forming resist pattern, and method for producing semiconductor device | ||
| 摘要 | To provide a resist matter improving material containing C4-11 linear alkanediol, and water. | ||
| 申请公布号 | US8980535(B2) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201113180784 | 申请日期 | 2011.07.12 |
| 申请人 | Fujitsu Limited | 发明人 | Kozawa Miwa;Nozaki Koji |
| 分类号 | G03F7/40;H01L21/027;H01L21/311;H01L21/3213;H01L21/768 | 主分类号 | G03F7/40 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A method for forming a resist pattern, comprising: forming a resist pattern on a processing surface, and applying a resist pattern improving material so as to cover a surface of the resist pattern, wherein the forming a resist pattern on a processing surface, comprising: applying a resist pattern material so as to cover a processing surface, andexposing and developing so as to form the resist pattern, wherein the resist pattern improving material comprises: C8 linear alkanediol; water, and a water-soluble resin. | ||
| 地址 | Kawasaki JP | ||