Method of forming anneal-resistant embedded resistor for non-volatile memory application

摘要

Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

主权项

1. A stack comprising:
a first electrode; a resistive switching layer; an embedded resistor, such that the resistive switching layer is disposed between the first electrode and the embedded resistor,
wherein the embedded resistor comprises a metal, silicon, and nitrogen,wherein the embedded resistor has a substantially amorphous structure; and a second electrode disposed adjacent to the embedded resistor such that the embedded resistor is disposed between the resistive switching layer and the second electrode.