发明名称 |
MRAM field disturb detection and recovery |
摘要 |
A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error. |
申请公布号 |
US8984379(B2) |
申请公布日期 |
2015.03.17 |
申请号 |
US201213484509 |
申请日期 |
2012.05.31 |
申请人 |
Everspin Technologies, Inc. |
发明人 |
Andre Thomas;Alam Syed M.;Engel Bradley;Butcher Brian |
分类号 |
H03M13/00;G06F11/00;G06F11/10;G11C29/44;H03M13/11 |
主分类号 |
H03M13/00 |
代理机构 |
Lee & Hayes, PLLC |
代理人 |
Lee & Hayes, PLLC |
主权项 |
1. A method comprising:
toggling data bits associated with an error correction code (ECC) word of a memory device twice; reading the data bits associated with the ECC word from the memory device; detecting a double bit error associated with the data bits of the ECC word; and determining that the memory device has been tampered with based at least in part on detecting the double bit error associated with the data bits of the ECC word. |
地址 |
Chandler AZ US |