发明名称 MRAM field disturb detection and recovery
摘要 A method and memory device is provided for reading data from an ECC word of a plurality of reference bits associated with a plurality of memory device bits and determining if a double bit error in the ECC word exists. The ECC word may be first toggled twice and the reference bits reset upon detecting the double bit error.
申请公布号 US8984379(B2) 申请公布日期 2015.03.17
申请号 US201213484509 申请日期 2012.05.31
申请人 Everspin Technologies, Inc. 发明人 Andre Thomas;Alam Syed M.;Engel Bradley;Butcher Brian
分类号 H03M13/00;G06F11/00;G06F11/10;G11C29/44;H03M13/11 主分类号 H03M13/00
代理机构 Lee & Hayes, PLLC 代理人 Lee & Hayes, PLLC
主权项 1. A method comprising: toggling data bits associated with an error correction code (ECC) word of a memory device twice; reading the data bits associated with the ECC word from the memory device; detecting a double bit error associated with the data bits of the ECC word; and determining that the memory device has been tampered with based at least in part on detecting the double bit error associated with the data bits of the ECC word.
地址 Chandler AZ US