发明名称 Data storage device and method of writing data in the same
摘要 A method is provided for writing data in a storage device, including a nonvolatile memory. The method includes receiving a pre-write command including a logical address and size information of write data, performing a pre-operation for optimization of a write operation based on the pre-write command, and writing the write data in the nonvolatile memory after the pre-operation is completed.
申请公布号 US8984219(B2) 申请公布日期 2015.03.17
申请号 US201213600512 申请日期 2012.08.31
申请人 Samsung Electronics Co., Ltd. 发明人 Park Dae-Kyu;Jang Mi Kyoung;Kim Jinhyuk;Jo Han-Chan
分类号 G06F12/00;G06F3/06;G06F12/02 主分类号 G06F12/00
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A method of writing data in a storage device including a nonvolatile memory, the method comprising: receiving a pre-write command for providing information associated with write data, the pre-write command including a logical address and size information of the write data; determining whether the received pre-write command contains an error; when it is determined that the received pre-write command does not contain an error, performing a pre-operation for optimization of a write operation based on the received pre-write command, the write operation being for writing the write data; and writing the write data corresponding to the received pre-write command in the nonvolatile memory after the pre-operation is completed, wherein performing the pre-operation comprises: detecting a write pattern of the write data based on the received pre-write command;determining whether the write data is partial data based on the received pre-write command;checking validity of pages of memory of the nonvolatile memory based on the received pre-write command; andallocating the memory for the write data based on at least one of the detected write pattern, the partial data determination result, and the validity checking result.
地址 Suwon-si, Gyeonggi-do KR