Interlayer design for epitaxial growth of semiconductor layers

摘要

An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.

主权项

1. A photovoltaic cell, comprising
a non-textured substrate; a non-magnetic amorphous or nanocrystalline seed layer disposed over the substrate, the seed layer being a metallic material; an underlayer comprising one or more metallic sub-layers deposited over the seed layer, wherein the underlayer layer promotes growth in a first growth direction of a majority of grains of one or more overlying semiconductor layers; a first semiconductor layer comprising an electron conducting material; a second semiconductor layer comprising a hole conducting material; and a transparent conductive layer.