发明名称 Methods and systems of material removal and pattern transfer
摘要 Polymerized material on a substrate may be removed by exposure to vacuum ultraviolet (VUV) radiation from an energy source within a gaseous atmosphere of a controlled composition. Following such removal, additional etching techniques are also described for nano-imprinting.
申请公布号 US8980751(B2) 申请公布日期 2015.03.17
申请号 US201113014508 申请日期 2011.01.26
申请人 Canon Nanotechnologies, Inc.;Molecular Imprints, Inc. 发明人 Schmid Gerard M.;Miller Michael N.;Choi Byung-Jin;Resnick Douglas J.;Sreenivasan Sidlgata V.;Xu Frank Y.;Donaldson Darren D.
分类号 H01L21/311;H01J37/20;G03F7/42;B82Y40/00;B82Y10/00;G03F7/00 主分类号 H01L21/311
代理机构 代理人 King Cameron A.
主权项 1. A method for removing solidified polymerizable material on a substrate, comprising the steps of: (a) forming a patterned layer, said patterned layer having pattern features and a residual layer on a at least portion of the substrate; (b) providing a vacuum ultraviolet (VUV) radiation source; (c) positioning said substrate such that said portion of said substrate having a residual layer is in alignment with said vacuum ultraviolet (VUV) radiation source; and (d) providing a gas composition of less than 10% oxygen between said portion of said substrate and said vacuum ultraviolet (VUV) radiation source; (e) irradiating said substrate while in the presence of said gas composition with vacuum ultraviolet (VUV) radiation to remove said residual layer from said portion of said substrate while preserving said patterned features.
地址 Austin TX US