Method of making a transistor

摘要

A method for manufacturing a transistor includes forming a stack of semiconductor on insulator type layers including at least one substrate, surmounted by a first insulating layer and an active layer to form a channel for the transistor; forming a gate stack on the active layer; producing a source and a drain including forming, on either side of the gate stack, cavities by at least one step of etching the active layer, the first insulating layer, and part of the substrate selectively to the gate stack to remove the active layer, the first insulating layer, and a portion of the substrate outside regions situated below the gate stack; forming a second insulating layer on the bared surfaces of the substrate, to form a continuous insulating layer with the first insulating layer; baring of the lateral ends of the channel; and the filling of the cavities by epitaxy.

主权项

1. A method for manufacturing a transistor comprising formation of a stack of layers of a semiconductor on insulator type, comprising at least one substrate, surmounted by a first insulating layer and an active layer intended to form a channel for the transistor, the method further comprising formation of a gate stack on the active layer and production of a source and drain, characterised in that the production of the source and drain comprises at least the following steps:
formation, on either side of the gate stack, of cavities by at least one step of etching the active layer, the first insulating layer and part of the substrate selectively to the gate stack at least so as to remove, outside regions situated below the gate stack, the entire active layer uncovered, the first insulating layer and a portion of the substrate; formation of a second insulating layer comprising formation, by oxidation of the substrate, of an insulating film over all surfaces of the substrate bared by said etching, so that the insulating film forms, with the first insulating layer, an insulating layer continuous from one cavity of the transistor to another; baring of lateral ends of the channel formed by the portion of active layer left in place under the gate stack; filling of the cavities by a semiconductor material by epitaxy from the lateral ends of the channel so as to form the source and drain.