High-purity lanthanum, sputtering target comprising high-purity lanthanum, and metal gate film mainly comprising high-purity lanthanum

摘要

Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum.

主权项

1. A sputtering target comprising high purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, contents of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, contents of alkali metal elements and alkali earth metal elements are respectively 1 wtppm or less, contents of transition metal elements and high-melting-point metal elements other than those above are respectively 10 wtppm or less, and contents of radioactive elements are respectively 10 wtppb or less.