Method and system for pre-migration of metal ions in a semiconductor package

摘要

Pre-migration of metal ions is achieved in a controlled manner to form a migrated metalover which an inhibitor is applied to prevent further migration. In a semiconductor circuit, pre-migration of metal ions is achieved by exposing a joined metal system to water, oxygen and an electrical field in a controlled manner. Conductors, joined to electrically isolating materials, are exposed to electrical fields in such a manner as to form one or more anodes to corresponding cathodes, thus liberating metal ions.;The metal ions are then allowed to migrate in a controlled manner from the anode toward the cathode to form a pre-migrated metal. Finally, an inhibitor is applied on top of the pre-migrated metal to prevent further migration.

主权项

1. A method, comprising:
exposing a metal coupling a conductor to a first material in a first area of a semiconductor substrate to water and oxygen to yield metal ions from the metal, wherein at least one of the metal and the conductor forms an anode; exposing the metal and the conductor to an electrical field having a magnitude selected to cause the metal ions to migrate from the anode toward a cathode in a controlled manner in response to at least the electrical field; and applying an inhibiting material over a region formed by the migrated metal ions, between the migrated metal ions and the anode, to inhibit further migration of the metal ions from the metal; wherein the semiconductor substrate includes a metal oxide semiconductor field effect transistor (MOSFET) having a gate lead forming the anode and a source lead forming the cathode.