发明名称 Method for forming an acoustical stack for an ultrasound probe
摘要 A method for forming an acoustical stack for an ultrasound probe comprises partly dicing a single crystal piezoelectric material to form single crystal pieces that are partly separated by a plurality of kerfs. The single crystal piezoelectric material comprises a carrier layer. The kerfs are filled with a kerf filling material to form a single crystal composite and the carrier layer is removed. At least one matching layer is attached to the single crystal composite, and dicing within the kerfs is accomplished to form separate acoustical stacks from the single crystal composite.
申请公布号 US8978216(B2) 申请公布日期 2015.03.17
申请号 US200912406704 申请日期 2009.03.18
申请人 General Electric Company 发明人 Calisti Serge Gerard;Lanteri Frederic;Tai Alan;Baumgartner Charles;Gelly Jean-Francois
分类号 H01L41/22;H01L41/37;H04R31/00;A61B8/00;G01S7/52;H01L41/18;G06F19/00;H01L41/338 主分类号 H01L41/22
代理机构 The Small Patent Law Group LLC 代理人 The Small Patent Law Group LLC ;Small Dean
主权项 1. A method comprising: dicing single crystal piezoelectric material to form single crystal pieces that are partly separated by plural kerfs, the single crystal piezoelectric material comprising a carrier layer along one side of a body of the single crystal piezoelectric material; filling the kerfs with a kerf filling material to form a single crystal composite; removing the carrier layer; attaching at least one matching layer to the single crystal composite; providing a flex circuit comprising at least one alignment mark disposed on a surface of the flex circuit; aligning the at least one matching layer with the at least one alignment mark on the surface of the flex circuit; and dicing within the kerfs at a predetermined distance from the at least one alignment mark to form separate acoustical stacks from the single crystal composite.
地址 Schenectady NY US