发明名称 |
UNIFORM MASKING FOR WAFER DICING USING LASER AND PLASMA ETCH |
摘要 |
<p>Uniform masking for wafer dicing using laser and plasma etch is described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits having bumps or pillars includes uniformly spinning on a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.</p> |
申请公布号 |
KR20150029027(A) |
申请公布日期 |
2015.03.17 |
申请号 |
KR20157003459 |
申请日期 |
2013.06.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHOWDHURY MOHAMMAD KAMRUZZAMAN;EATON BRAD;EGAN TODD;KUMAR AJAY;LEI WEI SHENG;YALAMANCHILI MADHAVA RAO |
分类号 |
H01L21/3065;H01L21/76;H01L21/78;H01L23/00 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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