Magnetic random access memory with switchable switching assist layer

摘要

A perpendicular spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The perpendicular STTMRAM element includes a magnetization layer having a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL). The direction of magnetization of the first and second free layers each is in-plane prior to the application of electrical current and after the application of electrical current, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.

主权项

1. A spin-transfer torque magnetic random access memory (STTMRAM) element configured to store a state when electrical current is applied thereto, the STTMRAM element comprising:
a. a fixed layer with magnetization pinned in the plane of the fixed layer; b. a barrier layer (BL) formed on top of the fixed layer; c. a free layer (FL) formed on top of the barrier layer and having a perpendicular magnetization; d. a junction layer (JL) formed on top of the FL; e. a perpendicular reference layer (PRL) formed on top of the JL with magnetization in a direction perpendicular to the magnetization of the fixed layer, the PRL including a first pinned layer (PL) and a second pinned layer (PL) separated from one another by a top separator layer (TSL), where the magnetization directions of the first pinned layer and the second pinned are anti-parallel relative to each other.