GaN-based Schottky diode having partially recessed anode

摘要

A semiconductor device such as a Schottky diode is provided which includes a substrate, a first active layer disposed over the substrate and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A first electrode has a first portion disposed in a recess in the second active layer and a second portion disposed on the second active layer such that a Schottky junction is formed therewith. A second electrode is in contact with the first active layer. The second electrode establishes an ohmic junction with the first active layer.

主权项

1. A semiconductor device, comprising:
a substrate; a first active layer disposed over the substrate; a second active layer disposed on the first active layer, the second active layer having a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer; a first electrode having a first portion disposed in a recess in the second active layer such that said second active layer is completely removed below the first portion of said first electrode, and a second portion disposed directly on the second active layer such that a Schottky junction is formed therewith, said first portion of the first electrode having a lower Schottky potential barrier than said second portion of the first electrode; and a second electrode in contact with the first active layer, said second electrode establishing an ohmic junction with the first active layer.