Methods of forming an e-fuse for an integrated circuit product and the resulting integrated circuit product

摘要

An integrated circuit product is disclosed that includes a resistor body and an e-fuse body positioned on a contact level dielectric material, wherein the resistor body and the e-fuse body are made of the same conductive material, a first plurality of conductive contact structures are coupled to the resistor body, conductive anode and cathode structures are conductively coupled to the e-fuse body, wherein the first plurality of conductive contact structures and the conductive anode and cathode structures are made of the same materials.

主权项

1. A method of forming an integrated circuit product, comprising:
forming a contact level dielectric material above a semiconductor substrate; depositing a layer of conductive material above said contact level dielectric material after forming said contact level dielectric material; performing a current etching process operation on said layer of conductive material so as to define a resistor body positioned above said contact level dielectric material and an e-fuse body positioned above said contact level dielectric material, wherein said resistor body and said e-fuse body are made of said layer of conductive material; forming at least one layer of insulating material positioned above said contact level dielectric material, said resistor body and said e-fuse body; and performing at least one concurrent process operation to form:
a first plurality of conductive contact structures positioned in said at least one layer of insulating material, each of said first plurality of conductive contact structures being conductively coupled to said resistor body;a conductive anode structure positioned in said at least one layer of insulating material, said conductive anode structure being conductively coupled to said e-fuse body;a conductive cathode structure positioned in said at least one layer of insulating material, said conductive cathode structure being conductively coupled to said e-fuse body; andat least one other conductive contact structure at least partially disposed in said contact level dielectric material, wherein said first plurality of conductive contact structures, said conductive anode structure, said conductive cathode structure and said at least one other contact structure are all comprised of the same material.