Semiconductor device

摘要

It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.

主权项

1. A semiconductor device comprising:
a glass substrate; an insulating layer over the glass substrate; and a semiconductor layer over the insulating layer, wherein the insulating layer is formed by using a source gas of a mixture of SiH4, N2O, NH3 and H2, wherein the source gas does not substantially comprise N2, wherein the insulating layer and the semiconductor layer are irradiated with a laser beam after a heating treatment, wherein the semiconductor layer has tensile stress, wherein the insulating layer has compressive stress, wherein total stress of the insulating layer and the semiconductor layer is −150 N/m to 0 N/m after the heating treatment, and wherein the glass substrate has a thermal expansion coefficient of greater than 6×10−7/° C. and less than or equal to 31.8×10−7/° C.