ZnTe on TiN or Pt electodes with a portion operable as a current limiting layer for ReRAM applications

摘要

Resistive random access memory (ReRAM) cells can include a ZnTe switching layer and TiN or Pt electrodes. The combination of the switching layer of ZnTe and the electrodes of TiN or Pt is designed to achieve desirable performance characteristics, such as low current leakage as well as low and consistent switching currents. High temperature anneal of the ZnTe switching layer can further improve the performance of the ReRAM cells. The switching layer may be deposited using various techniques, such as sputtering or atomic layer deposition (ALD).

主权项

1. A resistive random access memory cell comprising:
a first layer operable as a first electrode, wherein the first layer comprises TiN or Pt,
wherein the first layer comprises a base portion and a capping portion, the base portion operable as a current limiting layer and comprising between about 1 and 10 atomic % of a dopant material; a second layer operable as a resistive switching layer,
wherein the second layer is disposed over the first layer,wherein the second layer comprises ZnTe and is substantially amorphous; and a third layer operable as a second electrode,
wherein the third layer is disposed over the second layer, wherein the third layer comprises TiN or Pt.