发明名称 Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents
摘要 A method of forming a layered substrate comprising a self-assembled material is provided. The method includes forming a first layer of material on a substrate, forming a layer of a radiation sensitive material on the first layer of material, imaging the layer of the radiation sensitive material with patterned light, heating the layer of the radiation sensitive material to a temperature at or above the cross-linking reaction temperature, developing the imaged layer, and forming the block copolymer pattern. The radiation sensitive material comprises at least one photo-sensitive component selected from (a) a photo-decomposable cross-linking agent, (b) a photo-base generator, or (c) a photo-decomposable base; and a cross-linkable polymer, wherein imaging by the patterned light provides a pattern defined by a first region having substantial portions of a decomposed photo-sensitive component surrounded by regions having substantial portions of intact photo-sensitive component.
申请公布号 US8980538(B2) 申请公布日期 2015.03.17
申请号 US201313830859 申请日期 2013.03.14
申请人 Tokyo Electron Limited 发明人 Somervell Mark H.;Carcasi Michael A.
分类号 G03F7/26;G03F7/11;G03F7/004;G03F7/00;G03F7/039;G03F7/16;G03F7/32;G03F7/40;B82Y10/00;B82Y40/00 主分类号 G03F7/26
代理机构 Wood, Herron & Evans, LLP 代理人 Wood, Herron & Evans, LLP
主权项 1. A method of forming a layered substrate comprising a self-assembled material, comprising: forming a first layer of material on a substrate; forming a layer of a radiation sensitive material on the first layer of material, the radiation sensitive material comprising a photo-sensitive component comprising a photo-decomposable cross-linking agent; and a cross-linkable polymer; imaging the layer of the radiation sensitive material with patterned light to form a pattern in the layer of the radiation sensitive material, wherein the pattern is defined by a first region having substantial portions of the photo-decomposable cross-linking agent decomposed, and a second region having substantial portions of the photo-decomposable cross-linking agent intact; heating the layer of the radiation sensitive material to a temperature at or above the cross-linking reaction temperature to cross-link the cross-linkable polymer in one of the first or second regions to form a cross-linked region, while the other one of the first or second regions remains as a non-crosslinked region; developing the imaged layer to remove the non-crosslinked region; and forming a block copolymer pattern comprising the self-assembled material derived from a block copolymer.
地址 Tokyo JP