Programming methods and memories

摘要

Memory devices and programming methods for memories are disclosed, such as those adapted to program a memory using an increasing channel voltage for a first portion of programming, and an increasing but reduced channel voltage for a second portion of programming.

主权项

1. A method of programming a memory, comprising:
boosting a channel voltage for a first portion of a plurality of programming pulses with a first inhibit voltage waveform; and when a criteria is met, boosting the channel voltage differently for a second portion of the plurality of programming pulses with a different inhibit voltage waveform; wherein boosting the channel voltage for the first portion of the plurality of programming pulses comprises applying a local self-boosting scheme, the local self-boosting scheme comprising: applying inhibit voltage pulses greater than 0 volts to two access lines immediately adjacent to and on a drain side of an access line receiving the programming pulses; applying inhibit voltage pulses greater than 0 volts to two access lines immediately adjacent to and on a source side of the access line receiving the programming pulses; grounding an access line adjacent to the two access lines on the drain side; and grounding an access line adjacent to the two access lines on the source side; wherein a channel voltage when an initial program pulse of the second portion of the plurality of programming pulses is applied is less than a channel voltage when a final program pulse of the first portion of the plurality of programming pulses is applied.