| 发明名称 |
Memory devices, circuits and, methods that apply different electrical conditions in access operations |
| 摘要 |
A memory device can include a plurality of memory elements programmable between different impedance states; and circuits configured to apply first electrical conditions to one group of memory elements and second electrical conditions, different from the first electrical conditions, to another group of memory elements to vary a speed of an access operation to the different groups of memory elements. |
| 申请公布号 |
US8982602(B2) |
申请公布日期 |
2015.03.17 |
| 申请号 |
US201213600144 |
申请日期 |
2012.08.30 |
| 申请人 |
Adesto Technologies Corporation |
发明人 |
Sunkavalli Ravi;Wing Malcolm |
| 分类号 |
G11C13/00;G11C7/00;G11C7/10;G11C7/12;G11C7/22;G11C11/419;G11C11/56;G11C7/08;G11C11/16;G11C16/26 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device, comprising:
a plurality of memory elements programmable between different impedance states; and circuits configured to apply first electrical conditions to one group of memory elements in an access operation and second electrical conditions, different from the first electrical conditions, to another or the same group of memory elements in the access operation, to vary access speeds to the groups of memory elements in the access operation; wherein the memory elements comprise a programmable resistance material formed between two electrodes. |
| 地址 |
Sunnyvale CA US |
