| 发明名称 | Method of manufacturing solid-state image sensor | ||
| 摘要 | A solid-state image sensor is manufactured through a plurality of photolithography processes. The plurality of photolithography processes includes at least one first lithography process including a dividing exposure step of exposing a substrate using a plurality of photomasks, and at least one second lithography process including a non-dividing exposure step of exposing the substrate using one photomask. The at least one first lithography process includes a process for forming a resist pattern to define active regions on the substrate, and a process for forming a resist pattern to define charge accumulation region. | ||
| 申请公布号 | US8980540(B2) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201313772631 | 申请日期 | 2013.02.21 |
| 申请人 | Canon Kabushiki Kaisha | 发明人 | Kumano Hideomi |
| 分类号 | G03F7/26;G03F7/20 | 主分类号 | G03F7/26 |
| 代理机构 | Fitzpatrick, Cella, Harper & Scinto | 代理人 | Fitzpatrick, Cella, Harper & Scinto |
| 主权项 | 1. A method of manufacturing a solid-state image sensor through a plurality of photolithography processes, wherein the plurality of photolithography processes includes at least one first lithography process including a dividing exposure step of exposing a substrate using a plurality of photomasks, and at least one second lithography process including a non-dividing exposure step of exposing the substrate using one photomask, the at least one first lithography process includes a process for forming a resist pattern to define active regions on the substrate, and a process for forming a resist pattern to define charge accumulation region. | ||
| 地址 | Tokyo JP | ||