| 主权项 |
1. A method performed by a film deposition apparatus that includes
a rotary table on which a plurality of substrates are placed, a first gas supplying part disposed in a first process area above the rotary table, a second gas supplying part disposed in a second process area that is above the rotary table and apart from the first process area along a circumferential direction of the rotary table, and a separation gas supplying part disposed in a separation area provided between the first process area and the second process area, the method comprising:
a first step of rotating the rotary table by a first angle while supplying a separation gas from the separation gas supplying part and a first reaction gas from the first gas supplying part;a second step of supplying a second reaction gas from the second gas supplying part and rotating the rotary table by a second angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part;a third step of rotating the rotary table by a third angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part; anda fourth step of supplying a third reaction gas from the second gas supplying part and rotating the rotary table by a fourth angle while supplying the separation gas from the separation gas supplying part and the first reaction gas from the first gas supplying part, wherein positions in the rotary table where the first gas supplying part and the second gas supplying part start supplying the gases are moved by a predetermined angle in a rotation direction of the rotary table every time a cycle including the first step, the second step, the third step and the fourth step is repeated. |
