发明名称 |
Method of manufacturing graphene substrate, and graphene substrate |
摘要 |
Provided is a graphene substrate, which is manufactured by: bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and cooling the metal layer to precipitate the carbon in the metal layer as graphene on any substrate surface. |
申请公布号 |
US8980217(B2) |
申请公布日期 |
2015.03.17 |
申请号 |
US201113995809 |
申请日期 |
2011.11.25 |
申请人 |
NEC Corporation |
发明人 |
Hiura Hidefumi;Tsukagoshi Kazuhito |
分类号 |
C01B31/02;H01L21/02;H01L29/16;C01B31/04;H01L29/66;H01L29/786;B82Y30/00;B82Y40/00 |
主分类号 |
C01B31/02 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A method of manufacturing a graphene substrate, comprising the steps of:
(a) bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and (b) cooling the metal layer to precipitate the carbon in the metal layer as graphene on a surface of a heat-resistant material brought into contact with the metal layer to allow the metal layer to become liquid and to dissolve carbon in the carbon-containing layer into the metal layer, wherein the metal layer comprises a metal having a carbon solubility at a ppm level and a relatively low melting point to be liquid in a heating temperature range between 600° C. and 1200° C., and wherein (b) further comprises keeping the metal layer at a constant temperature between 400° C. and 600° C. |
地址 |
Tokyo JP |