发明名称 Method of manufacturing graphene substrate, and graphene substrate
摘要 Provided is a graphene substrate, which is manufactured by: bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and cooling the metal layer to precipitate the carbon in the metal layer as graphene on any substrate surface.
申请公布号 US8980217(B2) 申请公布日期 2015.03.17
申请号 US201113995809 申请日期 2011.11.25
申请人 NEC Corporation 发明人 Hiura Hidefumi;Tsukagoshi Kazuhito
分类号 C01B31/02;H01L21/02;H01L29/16;C01B31/04;H01L29/66;H01L29/786;B82Y30/00;B82Y40/00 主分类号 C01B31/02
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A method of manufacturing a graphene substrate, comprising the steps of: (a) bringing a metal layer into contact with a carbon-containing layer and heating the metal layer to dissolve carbon in the carbon-containing layer into the metal layer; and (b) cooling the metal layer to precipitate the carbon in the metal layer as graphene on a surface of a heat-resistant material brought into contact with the metal layer to allow the metal layer to become liquid and to dissolve carbon in the carbon-containing layer into the metal layer, wherein the metal layer comprises a metal having a carbon solubility at a ppm level and a relatively low melting point to be liquid in a heating temperature range between 600° C. and 1200° C., and wherein (b) further comprises keeping the metal layer at a constant temperature between 400° C. and 600° C.
地址 Tokyo JP