发明名称 DRAM sub-array level refresh
摘要 A memory controller coupled to a memory chip having a number of sub-arrays of memory cells is configured to determine a configuration of the memory chip. The memory controller is configured to read the sub-array configuration of the memory chip and to detect sub-array level conflicts between external commands and refresh operations. The memory controller keeps one or more non-conflicting pages open during the refresh operations.
申请公布号 US8982654(B2) 申请公布日期 2015.03.17
申请号 US201314088098 申请日期 2013.11.22
申请人 QUALCOMM Incorporated 发明人 Dong Xiangyu;Suh Jungwon
分类号 G11C11/406 主分类号 G11C11/406
代理机构 Seyfarth Shaw LLP 代理人 Seyfarth Shaw LLP
主权项 1. A method of refreshing a dynamic random access memory (DRAM), comprising: opening a page of the DRAM at a first row of a first DRAM bank of the DRAM, in which the first row of the first DRAM bank is in a first sub-array of the first DRAM bank; and refreshing a second row of the first DRAM bank before closing the first row of the first DRAM bank, in which the second row of the first DRAM bank is in a second sub-array of the first DRAM bank.
地址 San Diego CA US