| 发明名称 |
Method for applying a final metal layer for wafer level packaging and associated device |
| 摘要 |
A wafer level semiconductor device and manufacturing method including providing a semiconductor device wafer substrate having a backside, applying to the backside a conductive metallization layer, and applying to the backside over the conductive metallization layer a protective metal layer of titanium, titanium alloys, nickel, nickel alloys, chromium, chromium alloys, cobalt. cobalt alloys, palladium, and palladium alloys. |
| 申请公布号 |
US8980743(B2) |
申请公布日期 |
2015.03.17 |
| 申请号 |
US201313789411 |
申请日期 |
2013.03.07 |
| 申请人 |
FlipChip International LLC |
发明人 |
Burgess Guy F.;Buzard Shannon D.;Curtis Anthony P.;Scott Douglas M. |
| 分类号 |
H01L21/44;H01L23/485;H01L21/768;H01L23/482;H01L23/36;H01L23/373 |
主分类号 |
H01L21/44 |
| 代理机构 |
|
代理人 |
Naeckel Arno T. |
| 主权项 |
1. A method comprising:
providing a semiconductor device wafer substrate having a backside; applying a primary metal layer to the backside; laser marking the primary metal layer; and applying over the laser marked primary metal layer a corrosion resistant metal layer, wherein the corrosion resistant metal layer is selected from the group consisting of titanium, titanium alloys, nickel, nickel alloys, chromium, chromium alloys, cobalt, cobalt alloys, tungsten, tungsten alloys, palladium and palladium alloys. |
| 地址 |
Phoenix AZ US |
