Pattern forming process and resist compostion

摘要

A resist composition is provided comprising a polymer comprising recurring units having a carboxyl group substituted with an acid labile group, an acid generator, a sulfonium or iodonium salt of fluoroalkanesulfonamide and an organic solvent. A positive pattern is formed by applying the resist composition onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking, and immersing in an alkaline developer to dissolve away the exposed region of resist film, but not the unexposed region.

主权项

1. A resist composition comprising a polymer, an acid generator, a sulfonium salt or iodonium salt of fluoroalkanesulfonamide, and an organic solvent,
said polymer comprising acid labile group-substituted recurring units having the general formula (1): wherein R1 is hydrogen, fluorine, methyl or trifluoromethyl, Z is a single bond, phenylene, naphthylene or (backbone)-C(═O)—O—Z′—, Z′ is a straight, branched or cyclic C1-C10 alkylene group which may contain a hydroxyl radical, ether bond, ester bond, or lactone ring, or a phenylene or naphthylene group, and XA is an acid labile group, said sulfonium salt or iondonium salt of fluoroalkanesulfonaminde being at least one selected from the group consisting of the following compounds: