| 发明名称 | Semiconductor structure and integrated circuit | ||
| 摘要 | A semiconductor structure and an integrated circuit are provided. The semiconductor structure includes a first field-effect transistor (FET), a second FET, an isolation structure, and a body electrode. The first FET includes a first active body having a first type conductivity. The second FET includes a second active body having the first type conductivity. The first active body and the second active body are isolated from each other by the isolation structure. The body electrode has the first type conductivity and formed in the second active body. | ||
| 申请公布号 | US8981488(B1) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201314072976 | 申请日期 | 2013.11.06 |
| 申请人 | United Microelectronics Corp. | 发明人 | Wen Yung-Ju;Tang Tien-Hao;Wang Chang-Tzu |
| 分类号 | H01L21/70;H01L27/092 | 主分类号 | H01L21/70 |
| 代理机构 | WPAT, PC | 代理人 | WPAT, PC ;King Justin |
| 主权项 | 1. A semiconductor structure, comprising: a first field-effect transistor (FET) comprising a first active body having a first type conductivity; a second FET comprising a second active body having the first type conductivity; an isolation structure, wherein the first active body and the second active body are isolated from each other by the isolation structure; and a body electrode having the first type conductivity and formed in the second active body, wherein the first FET and the second FET has a common electrode of a second type conductivity opposite to the first type conductivity, the isolation structure is under the common electrode. | ||
| 地址 | Hsinchu TW | ||