发明名称 Chip die and semiconductor memory device including the same
摘要 A chip die including a first input/output (I/O) pad configured to transmit/receive an I/O signal of a memory cell array included in the chip die; a second I/O pad configured to, if a stacked chip die exists on the chip die, transmit/receive a via I/O signal of the stacked chip die, and configured to, if the stacked chip die does not exist on the chip die, transmit/receive a differential I/O signal of the chip die; and an I/O driver configured to receive an operation mode signal including information as to whether the stacked chip die exists on the chip die in such a manner that the second I/O pad is configured to transmit/receive the via I/O signal or the differential I/O signal.
申请公布号 US8982599(B2) 申请公布日期 2015.03.17
申请号 US201313948616 申请日期 2013.07.23
申请人 SK Hynix Inc. 发明人 Jeon Seon Kwang;Ryu Sung Soo;Kim Chang Il
分类号 G11C5/06;G11C5/04;G11C7/10 主分类号 G11C5/06
代理机构 William Park & Associates Patent Ltd. 代理人 William Park & Associates Patent Ltd.
主权项 1. A chip die comprising: a first input/output (I/O) pad configured to transmit/receive an I/O signal of a memory cell array included in the chip die; a second I/O pad configured to, if a stacked chip die exists on the chip die, transmit/receive a via I/O signal of the stacked chip die, and configured to, if the stacked chip die does not exist on the chip die, transmit/receive a differential I/O signal of the chip die; and an I/O driver configured to receive an operation mode signal including information as to whether the stacked chip die exists on the chip die in such a manner that the second I/O pad is configured to transmit/receive the via I/O signal or the differential I/O signal.
地址 Gyeonggi-do KR