| 发明名称 | Structure for a transformer with magnetic features | ||
| 摘要 | The present disclosure provides a semiconductor device. The semiconductor device includes a first inductor formed on a first substrate; a second inductor formed on a second substrate and conductively coupled with the first inductor as a transformer; and a plurality of micro-bump features configured between the first and second substrates. The plurality of micro-bump features include a magnetic material having a relative permeability substantially greater than one and are configured to enhance coupling between the first and second inductors. | ||
| 申请公布号 | US8981526(B2) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201314107794 | 申请日期 | 2013.12.16 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Yen Hsiao-Tsung;Lin Yu-Ling;Lu Ying-Ta;Chen Huan-Neng;Chen Ho-Hsiang |
| 分类号 | H01L27/00;H01F27/28;H01F5/00;H01L23/522 | 主分类号 | H01L27/00 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A semiconductor device, comprising: a first inductor formed on a first layer; a second inductor formed on a second layer and conductively coupled with the first inductor as a transformer; a plurality of vias configured between the first and second inductors, wherein the plurality of vias includes a first via and a second via; and at least a subset of the vias includes a magnetic feature configured to enhance inductive coupling between the first and second inductors, and wherein the first and second vias are electrically disconnected from the first and second inductors. | ||
| 地址 | Hsin-Chu TW | ||