| 主权项 |
1. An integrated circuit (IC), comprising:
a well region of the IC having a first doping level; a plurality of semiconductor regions implanted in the well region, wherein each of the plurality of semiconductor regions has a second doping level, and wherein the second doping level is greater than the first doping level; and a plurality of polysilicon regions arranged on each of the plurality of semiconductor regions, wherein the polysilicon regions are respectively connected directly to the plurality of semiconductor regions, and wherein the plurality of polysilicon regions have a resistance of at least one Ohm, wherein arranging the plurality of polysilicon regions on each of the plurality of semiconductor regions degenerates conductivity and increases resistivity of the plurality of semiconductor regions, wherein the plurality of semiconductor regions forms a drain of a high-voltage metal-oxide semiconductor field-effect transistor (MOSFET), and wherein the high-voltage MOSFET has a higher voltage rating and size than a low-power signal MOSFET. |
