Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes conductive layers and interlayer insulating layers stacked alternately with each other, at least one first channel layer passing through the conductive layers and the interlayer insulating layers, at least one second channel layer coupled to the first channel layers and passing through the conductive layers and the interlayer insulating layers, a first insulating layer interposed between the at least one first channel layer and the conductive layers, and a second insulating layer interposed between the at least one second channel layer and the conductive layers and having a higher nitrogen concentration than the first insulating layer.

主权项

1. A semiconductor device, comprising: conductive layers and interlayer insulating layers stacked alternately with each other; at least one first channel layer passing through the conductive layers and the interlayer insulating layers; at least one second channel layer disposed on and coupled to the first channel layers and passing through the conductive layers and the interlayer insulating layers; a first insulating layer interposed between the at least one first channel layer and the conductive layers and including nitrogen; and a second insulating layer interposed between the at least one second channel layer and the conductive layers and including nitrogen, wherein the second insulating layer has a higher nitrogen concentration than the first insulating layer, wherein the first insulating layer and the second insulating layer are included in different transistors within the stack.