Pre-cutting a back side of a silicon substrate for growing better III-V group compound layer on a front side of the substrate

摘要

The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).

主权项

1. A device, comprising:
a substrate having a first surface and a second surface opposite the first surface, the substrate consisting of a silicon substrate, wherein the substrate contains a plurality of recesses that extend from the second surface toward the first surface, and wherein the plurality of recesses are arranged so that the second surface of the substrate has a predefined pattern from a top view; a lattice-buffer layer formed on the first surface of the substrate, the lattice-buffer layer containing a material that reduces a lattice mismatch between a III-V group compound material and the silicon substrate or the silicon carbide substrate; and a III-V group compound layer formed over the lattice-buffer layer, wherein the III-V group compound layer and the lattice-buffer layer have different material compositions.