发明名称 |
Bipolar transistor with low resistance base contact and method of making the same |
摘要 |
Embodiments of the present invention provide a bipolar transistor with low resistance base contact and method of manufacturing the same. The bipolar transistor includes an emitter, a collector, and an intrinsic base between the emitter and the collector. The intrinsic base extends laterally to an extrinsic base. The extrinsic base further includes a first semiconductor material with a first bandgap and a second semiconductor material with a second bandgap that is smaller than the first bandgap. |
申请公布号 |
US8981430(B2) |
申请公布日期 |
2015.03.17 |
申请号 |
US201213710953 |
申请日期 |
2012.12.11 |
申请人 |
International Business Machines Corporation |
发明人 |
Pagette Francois;Schonenberg Kathryn T. |
分类号 |
H01L29/73;H01L29/66;H01L29/10;H01L29/737;H01L29/08 |
主分类号 |
H01L29/73 |
代理机构 |
Roberts Mlotkowski Safran & Cole, P.C. |
代理人 |
Cai Yuanmin;Roberts Mlotkowski Safran & Cole, P.C. |
主权项 |
1. A method of manufacturing a bipolar transistor, the method comprising:
providing a semiconductor substrate as a collector; forming an intrinsic base on said semiconductor substrate; forming an extrinsic base on an outer portion of said intrinsic base, said extrinsic base having a first layer of a first semiconductor material; forming an emitter on an inner portion of said intrinsic base, said emitter being separated from said extrinsic base by one or more sets of spacers; forming a second layer of a second semiconductor material of said extrinsic base, said second semiconductor material having a smaller bandgap than that of said first semiconductor material; forming a first set of tunable non-conductive sidewall spacers defining edges of said extrinsic base away from said emitter and directly on said first semiconductor material; forming a recessed portion of said first semiconductor material such that a surface of said first semiconductor adjacent to said first set of tunable non-conductive sidewall spacers has an upper surface at a lower height than a surface under said first set of tunable non-conductive sidewall spacers; and forming said second semiconductor material directly on the upper surface of said recessed portion of said first semiconductor material. |
地址 |
Armonk NY US |