Light emitting diode die and light emitting diode package incorporating the same

摘要

An LED die comprises a substrate and an epitaxial layer formed thereon. The epitaxial layer comprises a first n-type semiconductor layer, an active layer and a p-type semiconductor layer grown on the substrate in sequence. The LED die defines a receiving recess formed in a center of a top face of the p-type semiconductor layer. The receiving recess extends through the p-type semiconductor layer, the active layer and into the n-type semiconductor layer along a top-to-bottom direction of the epitaxial layer. A pair of p-pads are located at two opposite sides of the p-type semiconductor layer, respectively. A first n-pad is received in the receiving recess and located on the n-type layer.

主权项

1. A light emitting diode (LED) die, comprising:
a substrate; an epitaxial layer, the epitaxial layer comprising a first n-type semiconductor layer, an active layer and a p-type semiconductor layer grown on the substrate in sequence; a receiving recess, the receiving recess formed in a center of a top face of the p-type semiconductor layer and extending through the p-type semiconductor layer, the active layer and into the n-type semiconductor layer along a top-to-bottom direction of the epitaxial layer; a pair of p-pads located at two opposite sides of the p-type semiconductor layer, respectively; a first n-pad received in the receiving recess and located on the n-type layer; wherein the LED die further defines a narrow slot formed in the epitaxial layer; wherein the slot extends through two opposite face of the epitaxial layer transversely to communicate with the receiving recess and divides the epitaxial layer into a first epitaxial layer portion and a second epitaxial layer portion isolated from the first epitaxial layer portion; wherein the receiving recess has a cylinder shape and the remaining part of the n-type semiconductor layer located at the bottom of the receiving recess is divided by the slot into two parts respectively located at two lateral sides of the substrate; and wherein a second n-pad is also received in the receiving recess, wherein the first n-pad is located on one of two parts of the remaining part of the n-type semiconductor layer within the receiving recess and the second n-pad is located on the other part of the remaining part of the n-type semiconductor layer within the receiving recess.