Memory cells having storage elements that share material layers with steering elements and methods of forming the same

摘要

In some embodiments, a memory cell is provided that includes a metal-insulator-metal stack and a steering element coupled to the metal-insulator-metal stack. The metal-insulator-metal stack includes a first conductive layer, a reversible resistivity switching layer above the first conductive layer, and a second conductive layer above the reversible resistivity switching layer. The first conductive layer and/or the second conductive layer includes a first semiconductor material layer. The steering element includes the first semiconductor material layer. Numerous other aspects are provided.

主权项

1. A memory cell comprising:
a metal-insulator-metal (MIM) stack including:
a first conductive layer;a reversible resistivity switching (RRS) layer above the first conductive layer; anda second conductive layer above the RRS layer, wherein the first conductive layer and/or the second conductive layer comprises a first semiconductor material layer; anda steering element coupled to the MIM stack, wherein the steering element comprises the first semiconductor material layer.