Method of forming semiconductor device

摘要

A method of forming a semiconductor device includes the following steps. At least a fin structure is provided on a substrate and a gate structure partially overlapping the fin structure is formed. Then, a dielectric layer is formed on the substrate. Subsequently, a first etching process is performed to remove apart of the dielectric layer to form a first spacer surrounding the gate structure and a second spacer surrounding a sidewall of the fin structure, and a protective layer is formed in-situ to cover the gate structure and the first spacer. Finally, a second etching process is performed to remove a part of the protective layer and totally remove the second spacer.

主权项

1. A method of forming a semiconductor device, comprising:
providing at least a fin structure on a substrate; forming a gate structure partially overlapping the fin structure; forming a dielectric layer on the substrate; performing a first etching process to remove a part of the dielectric layer to form a first spacer surrounding the gate structure and a second spacer surrounding a sidewall of the fin structure; in-situ forming a protective layer covering the gate structure and the first spacer; and performing a second etching process to remove a part of the protective layer and totally remove the second spacer.