| 发明名称 | Measurement of radiations of high influence by a capacitive element of MOS type | ||
| 摘要 | A method for measuring a dose related to the non-ionizing effects of a radiation of particles comprises the irradiation of a capacitive element provided with an electrode made from a semiconductor material, the measurement of the capacitance of the capacitive element in an accumulation regime and the determination of the dose related to the non-ionizing effects from the measurement of capacitance of the capacitive element in the accumulation regime. | ||
| 申请公布号 | US8981308(B2) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201213982586 | 申请日期 | 2012.01.31 |
| 申请人 | Universite Montpellier 2 Sciences et Techniques | 发明人 | Arinero Richard;Mekki Julien;Touboul Antoine;Saigne Frederic;Vaille Jean-Roch |
| 分类号 | G01T1/02 | 主分类号 | G01T1/02 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A method for measuring a dose related to the non-ionizing effects of a particle radiation, comprising the steps of: irradiating a capacitive element provided with an electrode made from a semiconductor material; measuring the capacitance of the capacitive element in accumulation regime; and determining the dose related to non-ionizing effects from the measurement of the capacitance of the capacitive element in accumulation regime. | ||
| 地址 | Montpellier FR | ||