SOI WAFER MANUFACTURING METHOD, SOI WAFER AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of an SOI wafer which has a simple manufacturing process and inhibits the occurrence of a defect on a bonding surface in the manufacturing process, the SOI wafer having a high interface state density (Dit) between an oxide film and a base wafer and excellent RF characteristics.SOLUTION: In an SOI wafer manufacturing method of bonding a base wafer and a bond wafer where an oxide film is formed, and subsequently thinning the bond wafer, forming a first polycrystal layer on the base wafer by normal pressure CVD, and subsequently forming a second polycrystal layer by reduced pressure CVD, and bonding the base wafer on which two layers of the polycrystal layers are formed and the bond wafer on which the oxide film is formed.