METHOD FOR PRODUCING GRAPHENE

摘要

PROBLEM TO BE SOLVED: To perform control in such a manner that the concentration of impurities in graphene formed on SiC is made into a state of being low.SOLUTION: An SiC substrate 101 in which a buffer layer 102 is formed is heated to 700°C in a hydrogen gass whose pressure is controlled to 101324.72 Pa(=760 Torr), where the temperature is controlled to the one (700°C) set so as to be increased from a room temperature (about 25°C) at 8°C/1 min, and the conditions of the temperature are held for 1 hr. Next, after the holding for 1 hr, the temperature is reduced at about 5°C/min.