| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which is highly reliable and inexpensive and can be manufactured in high yield.SOLUTION: The semiconductor device includes: a nitride semiconductor layer formed on a substrate; and an electrode including a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer sequentially laminated on the nitride semiconductor layer. The first conductive layer includes a metal layer containing Ni or Pd, the second conductive layer includes a metal layer containing Ti or Ta, the third conductive layer includes a Ti or Ta nitride layer, and the fourth conductive layer includes a metal layer containing Al or Cu.</p> |
