用于制备烷基铟化合物之方法及其用途;PROCESS FOR PREPARING ALKYLINDIUM COMPOUNDS AND USE THEREOF

摘要

本发明涉及一种用于以高产率并且以高选择性和纯度廉价地并且对环境负责地制备烷基铟倍半氯化物之方法。根据本发明制备之烷基铟倍半氯化物也因为其高纯度和产率而特别适合于根据需要，以高产率和选择性并且以高纯度来制备含铟先质。可获得的该等含铟先质因为其高纯度而特别适合于金属-有机化学气相沈积法(MOCVD)或金属-有机气相外延法(MOVPE)。根据本发明之新颖方法由于改善的制程方案，尤其是一快速的制程操作而引起关注。藉由对环境引起较低水平损害的廉价起始物质之控制性并且相当多的使用，该方法也适合于工业规模。;The alkylindium sesquichloride prepared in accordance with the invention is particularly suitable, because of its high purity and yield as well, for preparation of indium-containing precursors in accordance with demand, with high yield and selectivity and in high purity. The indium-containing precursors obtainable, because of their high purity, are particularly suitable for metal-organic chemical vapour deposition (MOCVD) or metal-organic vapour phase epitaxy (MOVPE). ;The novel process according to the invention is notable for the improved process regime, especially for a rapid process operation. By controlled and substantial use of inexpensive starting materials which cause a low level of harm to the environment, the process is also suitable for the industrial scale.