Complementary metal oxide semiconductor device and method of manufacturing the same

摘要

Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer for an N type transistor is disposed on the buffer layer. A second layer for a P type transistor is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer.