气相成长装置以及气相成长方法;VAPOR PHASE GROWTH DEVICE AND VAPOR PHASE GROWTH METHOD

摘要

本实施形态的气相成长装置包括：反应室，其进行氮化物的成膜；第一气体供给路，其供给卤素系气体；第二气体供给路，其供给氨气；喷淋板，其配置于反应室的上部，于在内部到达反应室之前将自第一气体供给路供给卤素系气体的气体流路与自第二气体供给路供给氨气的气体流路分离，而向反应室内供给气体；及支持部，其设置于反应室内的喷淋板下方且可载置基板。; a first gas supplying path, which supplies halogen gas; a second gas supplying path, which supplies ammonia gas; a shower plate, which is disposed on the upper part of the reaction chamber, and separates a gas channel supplying halogen gas by the first gas supplying path from a gas channel supplying ammonia gas by the second gas supplying path before reaching the reaction chamber in the interior to supply gas into the reaction chamber; and a supporting part, which is disposed under the shower plate in the reaction chamber, and a substrate may be loaded thereon.