发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus, which performs plasma processing by using a helical type plasma source, capable of independently controlling radicals and ions.SOLUTION: A plasma processing apparatus comprises: a plasma processing chamber comprising a first plasma generation unit and second plasma generation unit; a first high frequency power source for supplying high frequency power to a helical coil wound around the outer periphery of the first plasma generation unit; a second high frequency power source for supplying high frequency power to a sample stage which is arranged in the second plasma generation unit and on which a sample is mounted; and a dispersion plate which separates the first and second plasma generation units and supplies radicals generated in the first plasma generation unit to the second plasma generation unit. The dispersion plate comprises a dielectric first dispersion plate and conductive second dispersion plate. The first dispersion plate is opposite to the sample stage sandwiching the second dispersion plate between the first dispersion plate and sample stage, and the second dispersion plate is connected to a ground terminal of the helical coil.
申请公布号 JP2015050362(A) 申请公布日期 2015.03.16
申请号 JP20130181753 申请日期 2013.09.03
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 OGAWA YOSHIFUMI;TAKIGAWA HIROAKI;KUDO YUTAKA;ISOZAKI SHINICHI;SHIMOMURA TAKAHIRO
分类号 H01L21/3065;C23C16/517;H01L21/31;H05H1/46 主分类号 H01L21/3065
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