发明名称 INFRARED LIGHT-RECEIVING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide an infrared light-receiving element using a semiconductor CNT and having a high TCR value.SOLUTION: An infrared light-receiving element 1 includes: a substrate 10; a first electrode 12 provided on the substrate 10; a second electrode 14 provided on the substrate 10 to be distanced from the first electrode 12; a third electrode 16 provided to be distanced from the first electrode 12 and the second electrode 14; and a channel section 18 provided to contact the first electrode 12 and the second electrode 14 and including a semiconductor carbon nanotube of single chirality.
申请公布号 JP2015049207(A) 申请公布日期 2015.03.16
申请号 JP20130182735 申请日期 2013.09.04
申请人 TOKYO METROPOLITAN UNIV 发明人 YANAGI KAZUHIRO;KUDO HIKARI;KAWAI HIDEKI;TAKENOBU HIROSHI
分类号 G01J1/02;C01B31/02;H01L31/00 主分类号 G01J1/02
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