发明名称 |
INFRARED LIGHT-RECEIVING ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide an infrared light-receiving element using a semiconductor CNT and having a high TCR value.SOLUTION: An infrared light-receiving element 1 includes: a substrate 10; a first electrode 12 provided on the substrate 10; a second electrode 14 provided on the substrate 10 to be distanced from the first electrode 12; a third electrode 16 provided to be distanced from the first electrode 12 and the second electrode 14; and a channel section 18 provided to contact the first electrode 12 and the second electrode 14 and including a semiconductor carbon nanotube of single chirality. |
申请公布号 |
JP2015049207(A) |
申请公布日期 |
2015.03.16 |
申请号 |
JP20130182735 |
申请日期 |
2013.09.04 |
申请人 |
TOKYO METROPOLITAN UNIV |
发明人 |
YANAGI KAZUHIRO;KUDO HIKARI;KAWAI HIDEKI;TAKENOBU HIROSHI |
分类号 |
G01J1/02;C01B31/02;H01L31/00 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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