| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an infrared detector having high amplification factor, and operating at low voltage with a simple structure.SOLUTION: A source terminal 105 of an NMOS transistor 102 which is an output stage of a pyroelectric type infrared detection element 100 is connected to a GND in parallel by a resistor 107 and a capacitor 108 for forming a source ground amplification circuit.</p> |
